FDMQ86530L mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A
* Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* Max RDS(on) = 25 mW at VGS = 4.5 V, ID = 6.5 A
* Substantia.
* Active Bridge
* Diode Bridge Replacement in 24 V & 48 V AC Systems
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G4 D1/D4 D3.
This Quad MOSFET solution provides ten−fold improvement in
power dissipation over diode bridge.
Features
* Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A
* Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* Max RDS(on) = 25 mW at VGS = 4.5 V, ID.
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